VQ1001P

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Specifications of VQ1001P

Packaging	*
FET Type	4 N-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	830mA
Rds On (Max) @ Id, Vgs	1.75 Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) @ Vgs	-
Input Capacitance (Ciss) @ Vds	110pF @ 15V
Power - Max	2W
Mounting Type	*
Package / Case	-
Supplier Device Package	*
call me	[email protected]

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Vishay/Siliconix