Part Number

TN0110N3-G

Manufacturer

Description
MOSFET N-CH 100V 350MA TO92-3
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of TN0110N3-G
PackagingBulk
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C350mA (Tj)
Rds On (Max) @ Id, Vgs3 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2V @ 500µA
Gate Charge (Qg) @ Vgs-
Input Capacitance (Ciss) @ Vds60pF @ 25V
Power - Max1W
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
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