- Part Number
SSM6N15AFE,LM
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET 2N-CH 30V 0.1A ES6
- Category
- Discrete Semiconductor Products
- Family
- FETs - Arrays
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Specifications of SSM6N15AFE,LM
| Packaging | Cut Tape (CT) | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate, 2.5V Drive | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 100mA | |
| Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 10mA, 4V | |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA | |
| Gate Charge (Qg) @ Vgs | - | |
| Input Capacitance (Ciss) @ Vds | 13.5pF @ 3V | |
| Power - Max | 150mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Supplier Device Package | ES6 | |
| Other Names | SSM6N15AFELMCT | |
| call me | [email protected] | |
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