Part Number

SIHG22N65E-GE3

Manufacturer

Description
MOSFET N-CH 650V 22A TO-247AC
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of SIHG22N65E-GE3
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Rds On (Max) @ Id, Vgs180 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs110nC @ 10V
Input Capacitance (Ciss) @ Vds2415pF @ 100V
Power - Max227W
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AC
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