Part Number

SIHB12N65E-GE3

Manufacturer

Description
MOSFET N-CH 650V 12A D2PAK
Category
Discrete Semiconductor Products
Family
FETs - Single

  • To learn about the specification of SIHB12N65E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
  • To process your RFQ, please add SIHB12N65E-GE3 with quantity into BOM.
  • Omoelec.com does NOT require any registration to request a quote of SIHB12N65E-GE3.
  • We are offering SIHB12N65E-GE3 for competitive price in the global market, please send us a quote request for pricing. Thank you!
Quick Order
Specifications of SIHB12N65E-GE3
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs380 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs70nC @ 10V
Input Capacitance (Ciss) @ Vds1224pF @ 100V
Power - Max156W
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)
call me[email protected]