MUN5211DW1T1

To learn about the specification of MUN5211DW1T1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add MUN5211DW1T1 with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of MUN5211DW1T1.
We are offering MUN5211DW1T1 for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of MUN5211DW1T1

Packaging	Cut Tape (CT)
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	10k
Resistor - Emitter Base (R2) (Ohms)	10k
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	250mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363
Other Names	MUN5211DW1T1OSCT
call me	[email protected]

MUN5211DW1T1 Related Products

ON Semiconductor