Part Number

MS2200

Manufacturer

Description
TRANS RF BIPO 1167W 43.2A MS102
Category
Discrete Semiconductor Products
Family
RF Transistors (BJT)

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Specifications of MS2200
PackagingBulk
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)65V
Frequency - Transition400MHz ~ 500MHz
Noise Figure (dB Typ @ f)-
Gain9.7dB
Power - Max1167W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5A, 5V
Current - Collector (Ic) (Max)43.2A
Mounting TypeChassis Mount
Package / CaseM102
Supplier Device PackageM102
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