- Part Number
IRLD110
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET N-CH 100V 1A 4-DIP
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of IRLD110, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of IRLD110
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) | |
| Rds On (Max) @ Id, Vgs | 540 mOhm @ 600mA, 5V | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 6.1nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 250pF @ 25V | |
| Power - Max | 1.3W | |
| Mounting Type | Through Hole | |
| Package / Case | 4-DIP (0.300", 7.62mm) | |
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP | |
| Other Names | *IRLD110 | |
| call me | [email protected] | |
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