Part Number

IRFD213

Manufacturer

Description
MOSFET N-CH 250V 450MA 4-DIP
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IRFD213
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C450mA (Ta)
Rds On (Max) @ Id, Vgs2 Ohm @ 270mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs8.2nC @ 10V
Input Capacitance (Ciss) @ Vds140pF @ 25V
Power - Max1W
Mounting TypeThrough Hole
Package / Case4-DIP (0.300", 7.62mm)
Supplier Device Package4-DIP, Hexdip, HVMDIP
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