Part Number

IRFBG30

Manufacturer

Description
MOSFET N-CH 1000V 3.1A TO-220AB
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IRFBG30
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25°C3.1A (Tc)
Rds On (Max) @ Id, Vgs5 Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs80nC @ 10V
Input Capacitance (Ciss) @ Vds980pF @ 25V
Power - Max125W
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB
Other Names*IRFBG30
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