Part Number

IRF610L

Manufacturer

Description
MOSFET N-CH 200V 3.3A TO-262
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IRF610L
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C3.3A (Tc)
Rds On (Max) @ Id, Vgs1.5 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs8.2nC @ 10V
Input Capacitance (Ciss) @ Vds140pF @ 25V
Power - Max3W
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262
Other Names*IRF610L
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