Part Number

IPW65R190CFD

Manufacturer

Description
MOSFET N-CH 650V 17.5A TO247
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IPW65R190CFD
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C17.5A (Tc)
Rds On (Max) @ Id, Vgs190 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id4.5V @ 730µA
Gate Charge (Qg) @ Vgs68nC @ 10V
Input Capacitance (Ciss) @ Vds1850pF @ 100V
Power - Max151W
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3
Other NamesIPW65R190CFDFKSA1
SP000905376
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