Part Number

IPW65R041CFD

Manufacturer

Description
MOSFET N CH 650V 68.5A PG-TO247
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IPW65R041CFD
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C68.5A (Tc)
Rds On (Max) @ Id, Vgs41 mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id4.5V @ 3.3mA
Gate Charge (Qg) @ Vgs300nC @ 10V
Input Capacitance (Ciss) @ Vds8400pF @ 100V
Power - Max500W
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3
Other NamesIPW65R041CFDFKSA1
SP000756288
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