- Part Number
IPD80R1K4CEBTMA1
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 800V 3.9A TO252-3
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of IPD80R1K4CEBTMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of IPD80R1K4CEBTMA1
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 2.3A, 10V | |
| Vgs(th) (Max) @ Id | 3.9V @ 240µA | |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 570pF @ 100V | |
| Power - Max | 63W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-4, DPak (3 Leads + Tab) | |
| Supplier Device Package | TO-252-3 | |
| Other Names | IPD80R1K4CEBTMA1TR SP001100604 | |
| call me | [email protected] | |
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