Part Number

GA20JT12-263

Manufacturer

Description
TRANS SJT 1200V 45A
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of GA20JT12-263
Packaging-
FET TypeSilicon Carbide, Normally Off
FET FeatureSuper Junction
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Rds On (Max) @ Id, Vgs60 mOhm @ 20A
Vgs(th) (Max) @ Id-
Gate Charge (Qg) @ Vgs-
Input Capacitance (Ciss) @ Vds3091pF @ 800V
Power - Max282W
Mounting Type-
Package / Case-
Supplier Device Package-
Other Names1242-1189
GA20JT12-247ISO
GA20JT12247ISO
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