Part Number

FDMS3660S

Manufacturer

Description
MOSFET 2N-CH 30V 13A/30A 8-PQFN
Category
Discrete Semiconductor Products
Family
FETs - Arrays

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Specifications of FDMS3660S
PackagingTape & Reel (TR)
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13A, 30A
Rds On (Max) @ Id, Vgs8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id2.7V @ 250µA
Gate Charge (Qg) @ Vgs29nC @ 10V
Input Capacitance (Ciss) @ Vds1765pF @ 15V
Power - Max1W
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePower56
Other NamesFDMS3660SFSTR
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