Part Number

EPC8003ENGR

Manufacturer

Description
TRANS GAN 100V 2.5A BUMPED DIE
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of EPC8003ENGR
PackagingTray
FET TypeGaNFET N-Channel, Gallium Nitride
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Rds On (Max) @ Id, Vgs300 mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) @ Vgs0.32nC @ 5V
Input Capacitance (Ciss) @ Vds38pF @ 50V
Power - Max-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie
Other Names917-EPC8003ENGR
EPC8003ENGK
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