Part Number

EPC8002ENGR

Manufacturer

Description
TRANS GAN 65V 2A BUMPED DIE
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of EPC8002ENGR
PackagingTray
FET TypeGaNFET N-Channel, Gallium Nitride
FET FeatureStandard
Drain to Source Voltage (Vdss)65V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs530 mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) @ Vgs0.14nC @ 5V
Input Capacitance (Ciss) @ Vds21pF @ 32.5V
Power - Max-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie
Other Names917-EPC8002ENGR
EPC8002ENGI
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