Part Number

EMD5T2R

Manufacturer

Description
TRANS NPN/PNP PREBIAS 0.15W EMT6
Category
Discrete Semiconductor Products
Family
Transistors (BJT) - Arrays, Pre-Biased

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Specifications of EMD5T2R
PackagingTape & Reel (TR)
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)47k, 4.7k
Resistor - Emitter Base (R2) (Ohms)47k, 10k
DC Current Gain (hFE) (Min) @ Ic, Vce68 @ 5mA, 5V / 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageEMT6
Other NamesEMD5T2RTR
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