Part Number

DRA5115G0L

Manufacturer

Description
TRANS PREBIAS PNP 150MW SMINI3
Category
Discrete Semiconductor Products
Family
Transistors (BJT) - Single, Pre-Biased

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Specifications of DRA5115G0L
PackagingTape & Reel (TR)
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)-
Resistor - Emitter Base (R2) (Ohms)100k
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSC-85
Supplier Device PackageSMini3-F2-B
Other NamesDRA5115G0L-ND
DRA5115G0LTR
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