Part Number

DME914C10R

Manufacturer

Description
TRANS NPN PREBIAS/PNP SSMINI6
Category
Discrete Semiconductor Products
Family
Transistors (BJT) - Arrays, Pre-Biased

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Specifications of DME914C10R
PackagingTape & Reel (TR)
Transistor Type1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)50V, 12V
Resistor - Base (R1) (Ohms)4.7k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic250mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition300MHz
Power - Max125mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSSMini6-F3-B
Other NamesDME914C10R-ND
DME914C10RTR
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