| Packaging | Tube | |
| FET Type | SiCFET N-Channel, Silicon Carbide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) | |
| Rds On (Max) @ Id, Vgs | 370 mOhm @ 6A, 20V | |
| Vgs(th) (Max) @ Id | 2.8V @ 1.25mA (Typ) | |
| Gate Charge (Qg) @ Vgs | 20.4nC @ 20V | |
| Input Capacitance (Ciss) @ Vds | 259pF @ 1000V | |
| Power - Max | 62.5W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247-3 | |
| call me | [email protected] | |
MOSFET N-CH 100V 5.6A TO-220AB

MOSFET N-CH 240V 500MA SOT223
MOSFET P-CH 100V 4A TO-220AB

MOSFET P-CH 200V 0.56A 4-DIP
MOSFET N-CH 500V 8A TO-220AB

MOSFET N-CH 100V 1A 4-DIP

MOSFET P-CH 60V 600MA 4-DIP

MOSFET N-CH 200V 600MA 4-DIP

MOSFET P-CH 100V 0.7A 4-DIP

MOSFET P-CH 100V 1A 4-DIP
MOSFET P-CH 200V 6.5A TO-220AB
MOSFET N-CH 200V 3.3A TO-220AB