BFP 640FESD H6327

To learn about the specification of BFP 640FESD H6327, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BFP 640FESD H6327 with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of BFP 640FESD H6327.
We are offering BFP 640FESD H6327 for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of BFP 640FESD H6327

Packaging	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.7V
Frequency - Transition	46GHz
Noise Figure (dB Typ @ f)	0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Gain	8B ~ 30.5dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 30mA, 3V
Current - Collector (Ic) (Max)	50mA
Mounting Type	Surface Mount
Package / Case	4-SMD, Flat Leads
Supplier Device Package	4-TSFP
Other Names	BFP640FESDH6327XTSA1 SP000890034
call me	[email protected]

BFP 640FESD H6327 Related Products

Infineon Technologies